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| BF370 transistor (npn) features power dissipation p cm: 0.5 w (tamb=25 ) collector current i cm: 0.1 a collector-base voltage v (br)cbo: 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100 a, i e =0 40 v collector-emitter breakdown voltage v(br) ceo ic= 1 ma, i b =0 15 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 4.5 v collector cut-off current i cbo v cb = 20v, i e =0 0.4 a emitter cut-off current i ebo v eb = 2v, i c =0 0.1 a dc current gain h fe v ce = 1v, i c = 10ma 40 200 collector-emitter saturation voltage v ce (sat) i c =15ma, i b =1.5 ma 0.2 v base-emitter saturation voltage v be (sat) i c =15ma, i b =1.5 ma 1.2 v transition frequency f t v ce = 10v, i c =10ma f = 100mhz 500 mhz 1 2 3 to-92 1. collector 2. base 3. emitter b f370 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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